Quantum dot lattices (QDLs) have the potential to allow for the tailoring ofoptical, magnetic and electronic properties of a user-defined artificial solid.We use a dual gated device structure to controllably tune the potentiallandscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling theformation of a periodic QDL. The current-voltage characteristics, I(V), followa power law, as expected for a QDL. In addition, a systematic study of thescaling behavior of I(V) allows us to probe the effects of background disorderon transport through the QDL. Our results are particularly important forsemiconductor-based QDL architectures which aim to probe collective phenomena.
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